bas 28w oct-07-1999 1 silicon switching diode array ? for high-speed switching applications ? electrical insulated diodes vps05605 4 2 1 3 eha07289 4 3 2 1 di1 di2 type marking pin configuration package bas 28w jts 1 = c1 2 = c2 3 = a2 4 = a1 sot-343 maximum ratings parameter value symbol unit v v r 75 diode reverse voltage peak reverse voltage v rm 85 200 ma forward current i f a i fs surge forward current, t = 1 s 4.5 total power dissipation , t s = 103 c p tot 250 mw 150 c junction temperature t j storage temperature t st g -65 ... 150 thermal resistance junction - ambient 1) r thja 460 k/w junction - soldering point r thjs 190 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bas 28w oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. typ. min. dc characteristics v v (br) breakdown voltage i (br) = 10 a - - 85 mv forward voltage i f = 1 ma i f = 10 ma i f = 50 ma i f = 150 ma - - - - - - - - v f 715 855 1000 1250 a reverse current v r = 75 v i r 1 - - reverse current v r = 25 v, t a = 150 c v r = 75 v i r - - - - 30 50 ac characteristics pf diode capacitance v r = 0 v, f = 1 mhz - 2 - c d reverse recovery time i f = 10 ma, i r = 10 ma, r l = 100 ? , measured at i r = 1ma t rr - ns - 6 test circuit for reverse recovery time ehn00019 f d.u.t. oscillograph pulse generator: t p = 100ns, d = 0.05, t r = 0.6ns, r i = 50 ? oscillograph: r = 50 ? , t r = 0.35ns, c 1pf
bas 28w oct-07-1999 3 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 ma 300 i f 5 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 ma 300 i f t s 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 ma 300 i f t a 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 ma 300 i f forward current i f = f ( v f ) t a = 25c 0 0 ehb00035 bas 28 0.5 1.0 v 1.5 50 100 ma 150 f f v max typ permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bas 28w oct-07-1999 4 reverse current i r = f ( t a ) 10 10 10 0 50 100 150 bas 28 ehb00034 na t a r c 10 10 5 4 3 2 1 5 5 5 25 v 70 v max. = 70 v r v typ. forward voltage v f = f ( t a ) 0 0.5 1.0 0 50 100 150 bas 28 ehb00037 v t a v f c f = 100 ma 10 ma 1 ma 0.1 ma
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